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    Mariano Anderle publications on journals with international referee board

     

     

    Papers 1-20 21-40 41-60 61-80 81-100 101-120 121-140

     

    1. "Non-linear phenomena in hydrogen implantation into (100) silicon", G.F.Cerofolini, L.Meda, C.Volpones, R.Diercks, G.Mercurio, M.Anderle, R.Canteri, F.Cembali, R.Fabbri and M.Servidori, Nucl. Instrum. and Meth. in Physics Research B39, 26 (1989).

     

    1. "Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorous implanted in silicon", M.Servidori, S.Solmi, P.Zaumseil, U.Winter and M. Anderle, J. Appl. Phys. 65, 98 (1989).

     

    1. "Dependence of transient enhanced diffusion on defects depth position in ion implanted silicon", S.Solmi, F.Cembali, R.Fabbri, R.Lotti, M.Servidori, M.Anderle and R.Canteri, Nucl. Instrum. and Meth. in Physics Research B37/38, 394 (1989).

     

    1. "Reduction of phosphorous transient enhanced diffusion due to the extended defects in ion implanted silicon", M.Servidori, F.Cembali, R.Fabbri, E.Gabilli, S.Solmi, P.Negrini, P.Zaumseil, U.Winter, M.Anderle and R.Canteri, Nucl. Instrum. and Meth. in Physics Research B39, 347 (1989).

     

    1. "On the influence of the Cottrell atmosphere on the recombination losses at grain boundaries in polycrystalline silicon", S.Pizzini, F.Borsani, A.Sandrinelli, D.Narducci, M.Anderle and R.Canteri, Polycrystalline Semiconductors Grain Boudaries and Interfaces, Eds. H.J.Moller, H.P.Strunk and J.H.Werner, Springer Proceedings in Physics, Vol.35 (Hamburg 1989) p.115.

     

    1. "Hydrogen implantation into (100) silicon: A study of the released damage", L.Meda, G.F.Cerofolini, R.Diercks, G.Mercurio, M.Servidori, F.Cembali, M.Anderle, R.Canteri, G.Ottaviani, C.Claeys and J. Vanhellemont, Nucl. Instrum. and Meth. in Physics Research B39, 38 (1989) .

     

    1. "Detection of oxygen, carbon and deep level impurities segregation at grain boundaries in polycrystalline silicon", M.Anderle, R.Canteri, P.Cagnoni, A.Sandrinelli and S.Pizzini, Secondary Ion Mass Spectrometry (SIMS VI), Eds. A.Benninghoven, A.M.Huber and H.W.Werner, J.Wiley & Sons (Chichester 1988) p.769.

     

    1. "On the silicon dioxide/polycrystalline silicon interface width measurement", G.Queirolo, S.Manzini, L.Meda, M.Anderle, R.Canteri, A.Armigliato, and S.Frabboni, Surf. Interf. Anal. 13, 202 (1988).

     

    1. "Quantitative SIMS analysis of BF2 implanted and diffused layers: Comparison with carrier profiles", M.Anderle, R.Canteri, D.Robba and G. Queirolo, Secondary Ion Mass Spectrometry (SIMS VI), Eds. A.Benninghoven, A.M.Huber and H.W.Werner, J.Wiley & Sons (Chichester 1988) p.747.

     

    1. "BF2 ion implantation in silicon: Effects of the in-flight ion dissociation", G.Queirolo, C.Bresolin, L.Meda, M.Anderle and R.Canteri, J. Electrochem. Soc. 135, 777 (1988).

     

    1. "Influence of implant induced vacancies and interstitials on boron diffusion in silicon", S.Solmi, R.Angelucci, F.Cembali, M.Servidori and M.Anderle, Appl. Phys. Lett. 51, 331 (1987).

     

    1. "Grain boundary segregation of oxygen and carbon in polycrystalline silicon", S.Pizzini, P.Cagnoni, A.Sandrinelli, M.Anderle and R.Canteri, Appl. Phys. Lett. 51, 676 (1987).

     

     

    1. "Radiation damage induced transient enhanced diffusion of dopants in silicon", R.Angelucci, E.Gabilli, R.Lotti, P.Negrini, M.Servidori, S.Solmi and M.Anderle, Mat. Res. Soc. Symposium Proceedings 74, 505 (1987).

     

    1. "Lattice Damage, Boron Diffusion, and Dopant Activation in BF2 Implanted Layers", G.Queirolo, P.Caprara, L.Meda, C.Guareschi, M.Anderle, G.Ottaviani, and A.Armigliato, J. Electrochem. Soc. 134, 2905 (1987).

     

    1. "Electrical characterization of monocrystalline and polycrystalline transition metal silicides", O.Laborde, O.Thomas, R.Madar, J.P.Senateur, G.Queirolo, M.Anderle and F.Nava, Le vide les couches minces" Ed. Société Française du Vide 42, 199 (1987).

     

    1. "Current effects in BF2 implants silicon", G.Queirolo, P.Caprara, L.Meda, G.Ottaviani, M.Anderle, D.Bassi, Nucl. Instrum. and Meth. in Physics Research, B19/20, 329 (1987).

     

    1. "Mixing and chemical effects in SIMS depth profiling the Si/SiO2 interface", M.Anderle and C.M.Loxton, Nucl. Instrum. and Meth.in Physics Research B15, 186 (1986).

     

    1. "Add a signal averaging facility to your laboratory microcomputer", D.Bassi, A.Boschetti, M.Scotoni, M.Anderle, S.Iannotta and M.Zen, J. Phys.E: Sci. Instrum. 17, 276 (1984)

     

    1. "Spin polarized atomic hydrogen diffraction experiments from alkali halides surfaces", M.Anderle, D.Bassi, S.Iannotta and G.Scoles, Proceedings of 9th International Symposium on Molecular Beams, Freiburg, 205(1983).

     

    1. "Measurement of the spin-exchange cross section in the collision of H atoms with O2 and NO by means of stored atomic-beam spectroscopy", M.Anderle, D.Bassi, S.Iannotta, S.Marchetti and G. Scoles, Phys. Rev. A23, 34 (1981).