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    Mariano Anderle publications on journals with international referee board

     

     

    Papers 1-20 21-40 41-60 61-80 81-100 101-120 121-140

     

    1. "Effect of Si on the electronic structure of sputter-deposited C film: an electron study", G.Speranza, N.Laidani, L.Calliari and M.Anderle, Diamond and Related Materials 8, 517 (1999).

     

    1. "A study of physical properties on vanadium oxide based gas sensors", R.Rella, P.Siciliano, L.Vanzetti, M.Anderle, A.Cricenti, R.Generosi, M.Girasole and C.Coluzza, Thin Solid Films 349, 254 (1999).

     

    1. “ULSI technology and materials: Quantitative answers by combined mass spectrometry surface techniques", M.Bersani, M.Fedrizzi, M.Sbetti and M.Anderle, Characterization and Metrology for ULSI Technology, AIP Conf. Proc. n.449. Eds D.G. Seiler et al., Woodbury, N.Y. (1998), pg. 892.

     

    1. “Quantitative SIMS depth distribution of nitrogen in Nitridated Oxide at the SiO2/Si interface", M.Bersani, M.Fedrizzi, M.Ferroni, G.Savoia and M.Anderle, Secondary Ion Mass Spectrometry (SIMS XI), Eds. G.Gillen et al., J.Wiley &Sons (1998), pg.1055.

     

    1. "Characterization of Carbon and Zirconia films deposited on polycarbonate for scratch-proof coating applications" N.Laidani, G.Speranza, A.Nefedov, L.Calliari and M.Anderle, Diamond and Related Materials 7, 1394 (1998).

     

    1. “Characterization of functional films on solid substrates by TOF-SIMS", R.Canteri, C.Malacarne, A.Rigo, F.Vianello, L.Zennaro, M.Scarpa, and M.Anderle, Secondary Ion Mass Spectrometry (SIMS XI), Eds. G.Gillen et al., J.Wiley &Sons (1998), pg.497.

     

    1. "Improvement of mechanical properties of a-C:H by silicon addition", C.De Martino, G.Fusco, G.Mina, A.Tagliaferro, L.Vanzetti, L.Calliari and M.Anderle", Diamond and Related Materials 6, 559 (1997).

     

    1. 53“Comparative analysis of high energy electron diffraction patterns from LB films of Cd-and Pb-stearates”, V.Klechkovskaya, M.Anderle, R.Antolini, R.Canteri, L.Feigin, E.Rakova, N.Stiopina, Thin Solid Film 284-285, 208 (1996).

     

    1. “Real-time process and products diagnostic in RTCVD using in-situ mass spectrometric sampling”, L.L.Tedder, G.W.Rubloff, I.Shareef, M.Anderle, D.-H.Kim, and G.N.Parsons, J.Vac.Sci.Technol. B13, 1924 (1995).

     

    1. “Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon", C.Szeles, B.Nielsen, P.Asoka-Kumar, K.G.Lynn, M.Anderle, T.P.Ma, and G.W.Rubloff, Materials Science Forum 175-178, 545 (1995).

     

    1. “Sub-atmospheric CVD (SACVD) Ozone/TEOS process for SiO2 trench filling”, I.Shareef, G.W.Rubloff, M.Anderle, W.N.Gill, J.Cotte, D.-H.Kim, J.Vac.Sci.Technol. B13, 1888 (1995).

     

    1. “SIMS and SNMS Depth Profiling of III-V Compound Samples”, M.Anderle, R.Canteri, M.Fedrizzi, P.Lazzeri and L.Moro, Secondary Ion Mass Spectrometry (SIMS IX), Eds. A.Benninghoven et al., J.Wiley &Sons (1995), pg.686-689.

     

    1. “Investigation on laser ablation of InGaAs by means of resonance ionization and surfaces analysis spectrometries”, M.Anderle, P.Lazzeri, L.Moro, P.Benetti, M.Rossella and G.Queirolo, Spectrochimica Acta B49, 1453 (1994).

     

    1. “The role of the implantation induced defects in the surface-oriented diffusion of fluorine in silicon”, Cs.Szeles, P.Asoka-Kumar, K.G.Lynn, G.W.Rubloff, T.P.Ma, and M.Anderle, J. Appl. Phys 76, 3403 (1994).

     

    1. “Spectroscopic investigation of electroluminescent porous silicon”, L.Pavesi, M.Ceschini, G.Mariotto, E.Zanghellini, O.Bisi, M.Anderle, L.Calliari, M.Fedrizzi, L.Fedrizzi, J. Appl. Phys 75, 1118 (1994).

     

    1. "Porous silicon and its application for light emitting diodes", L.Pavesi, G.Mariotto, O.Bisi, M.Anderle, and L.Calliari, Proceedings of International Symposium on “Physical concept and materials for novel optoelectronic device application II”. Trieste (I), 24-28 May 1993.

     

    1. “Electron bombardment effects on light emitting porous silicon”, L.Calliari, M.Anderle, E.Zanghellini, G.Mariotto, O.Bisi and L.Pavesi, J. of Luminescence 57, 83 (1993).

     

    1. "Electronic charge trapping effects in porous Silicon", L.Pavesi, L.Calliari, E.Zanghellini, G.Mariotto, M.Anderle, and O.Bisi, Proceedings of Nato Advanced Research Workshop on “Optical properties of low dimensional silicon structures” Meyland (F), March 1st - 3rd, 1993.NATO ASI Series. Editor D.Bensahel.

     

    1. "Chemical Vapor Deposition of Rough-Morphology Silicon Films over a Broad Temperature Range ", S.S.Dana, M.Anderle, G.W.Rubloff and A.Acovic, Appl. Phys. Lett., 63, 1387 (1993).

     

    1. "Use of Tunneling Microscopy and Spectroscopy for the study of high Tc superconductors", L.Gonzo and M.Anderle, Defects in Electronic Ceramics Ed. S.Pizzini, Trans. Tech. Publ. Ltd,. Material Science Forum Vol. 116 (1993) pg. 169.